Laser & Optoelectronics Progress, Volume. 49, Issue 12, 120002(2012)
Research Progress in Droop Effect of InGaN-Based Light-Emitting Diodes
Since the efficiency droop at the high current density of the InGaN-based light-emitting diodes (LEDs) influences the application of power-LEDs, the origin and the overcoming method of the efficiency droop have become a hotspot. Several possible mechanisms are discussed, such as Read-Shockley-Hall (RSH) recombination, Auger recombination, carrier localization, polarization field, efficiency of injected carries and heat effect. Some methods for overcoming efficiency droop are also discussed.
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Wang Yanming, Xu Linwei, Tan Jian, Xu Yabing. Research Progress in Droop Effect of InGaN-Based Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2012, 49(12): 120002
Category: Reviews
Received: Aug. 2, 2012
Accepted: --
Published Online: Oct. 19, 2012
The Author Email: Yanming Wang (wym8105@163.com)