Acta Optica Sinica, Volume. 17, Issue 10, 1398(1997)
Lasing in ZnCdSe/ZnSe Single Quantum Well Structures with Photopumping
A well-defined n=1 heavy-hole exeiton absorption peak from a loealized state and n=2 heavy-hole exeiton emission peak was observed in a ZnCdSe/ZnSe single quantum well structures at 77 K. The localized state was formed by fluctuation of well-barrier interfaces. Stimulated emission was observed from the localized state. The gain originate from exeiton phase space fill of these state. An optical excitation threshold around 116 kW/cm2 was measured. The gain switching was observed. These results were obtained from photoluminescence under oaring excitation power, and luminescence decay experiments.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Lasing in ZnCdSe/ZnSe Single Quantum Well Structures with Photopumping[J]. Acta Optica Sinica, 1997, 17(10): 1398