Laser & Optoelectronics Progress, Volume. 51, Issue 12, 122303(2014)
Optimizing Design for GaN-Based Light Emitting Diodes with Photonic Crystal Slab
Layered light-emitting diode (LED) of GaN photonic crystal (PC) with periodic air holes is studied. Photonic band structures of the photonic crystal are obtained by plane-wave expansion method. The effects of air-hole radius on band gaps are analyzed, and the results show that the widest band gap is 21.5%. A point dipole polarized in the x-y plane is located in the center of the second GaN layer and is excited by a Gaussian pulse profile for the wavelength of 450 nm. Based on the three-dimensional finite-difference time-domain method, extraction efficiency of the LED is obtained. The effects of the PC thickness and air-hole radius on relative extraction efficiency of layered GaN-LED are analyzed. The results show that the maximum relative extraction efficiency of 2 can be obtained with the optimal structural parameters.
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Liu Dan, Tong Aihong, Xiao Ming, Wang Yun, Hu Sen. Optimizing Design for GaN-Based Light Emitting Diodes with Photonic Crystal Slab[J]. Laser & Optoelectronics Progress, 2014, 51(12): 122303
Category: Optical Devices
Received: Jul. 18, 2014
Accepted: --
Published Online: Nov. 26, 2014
The Author Email: Dan Liu (liudan725@126.com)