GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 27, Issue 12, 1072(2000)

[in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

Abstract Get PDF(in Chinese)

In this paper,the factors influencing the ultimate output power of laser diodes are analyzed.The GaAlAs/GaAs material with gradient refraction index,separate confinement single quantum well structure has been grown by MBE.The CW output power of the array diode laser is 10 W.The peak wavelength is 806～809 nm.

Keywords

array MBE quantum well semiconductor lasers

Tools

Get Citation

Copy Citation Text

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers[J]. Chinese Journal of Lasers, 2000, 27(12): 1072

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Laser physics

Received: May. 17, 1999

Accepted: --

Published Online: Aug. 9, 2006

The Author Email:

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology