Journal of the Chinese Ceramic Society, Volume. 51, Issue 1, 145(2023)
Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation
In this work, for exploring the controlled growth strategy of indium-oxide-based semiconductor film with preferred orientation and investigating the effect of crystal orientation on the photoelectric property, nitrogen-doped indium oxide (In2O3:N) films with (222) and (440) preferred orientation were prepared on quartz (SiO2) substrate by magnetron sputtering, respectively. The crystal structure, surface morphology, elemental composition and optical bandgap of In2O3:N films were characterized by X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy and ultraviolet-visible spectrophotometer, respectively. The photoelectric properties of as-grown films with different preferred orientation were investigated. The results show that the nitrogen doping in In2O3:N films with different preferred orientation mainly is dominated by nitrogen substitutional oxygen. The band gap of indium oxide can be reduced to 2.89 eV by nitrogen doping. The In2O3:N film with (440) preferred orientation has a shorter photoresponse time than the (222) one.
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SUN Hui, SHEN Longhai, LIU Zitong, CHEN Jianjin, ZHANG Ruixin, CHENG Jia, ZHANG Xinglai. Preparation and Photoelectric Properties of Nitrogen Doped Indium Oxide Films with Preferred Orientation[J]. Journal of the Chinese Ceramic Society, 2023, 51(1): 145
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Received: Jun. 13, 2022
Accepted: --
Published Online: Mar. 10, 2023
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