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Chinese Optics Letters, Volume. 3, Issue 0s, 31(2005)

Experimental characterization improving the design of InGaAs/InP APD for single photon detection

[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]3, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]3, [in Chinese]2, and [in Chinese]1
Author Affiliations
  • 1School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631
  • 2Department of Applied Physics, South China University of Technology, Guangzhou,510641
  • 3College of Applied Physics, Guangdong University of Technolody, Guangzhou 510090
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    The passively quenched operation of avalanche photodiode (APD) has been used to characterizing InGaAs/InP APD including punch through voltage, avalanche voltage and break down voltage that are all important in the design of APD for single photon detection. The punch through voltage at certain doping level can be related to the thickness of the InP multiplication layer and the thickness of the un-intentionally doped n-type InP layer can be adjusted in according to the experimental data. The analysis indicates that the punch through voltage should be close to the breakdown voltage that can be realized by adjusting the thickness of InP multiplication layer.

    Keywords
    040.3780040.5570160.1890230.5160270.5570040.3060
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental characterization improving the design of InGaAs/InP APD for single photon detection[J]. Chinese Optics Letters, 2005, 3(0s): 31

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    Paper Information

    Received: --

    Accepted: --

    Published Online: Mar. 5, 2007

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology