Acta Optica Sinica, Volume. 12, Issue 9, 790(1992)
Study of band-filling effect in quantum well with excitation of 532 nm picosecond laser
By using a mode-locked picosecond pulse laser at 532 nm and a time-resolved detection system, we have measured the time-resolved ptotoluminescence spectra of InαGa1-αAs/GaAs single quantum well samples at 77K with different excitation powers. At low excitation, the photoluminescence peak of InGaAs well shows small shift with, the time. But at 175 mW excitation, there is a great blue shift of the photoluminescenoe peak at the beginning and shift back to the longer wavelength side with the time. The result clearly shows the band-filling effect of the carriers exising in the well.
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of band-filling effect in quantum well with excitation of 532 nm picosecond laser[J]. Acta Optica Sinica, 1992, 12(9): 790