Optoelectronic Technology, Volume. 43, Issue 4, 305(2023)
Low‑energy‑consumption Organic Synaptic Transistors Enabled by Schottky Barrier Regulation
In the study, n-type organic semiconductor material N2200 was doped in p-type organic semiconductor material PDVT-10 to form a trapping center with synaptic characteristics. Metal semiconductor junction formed by contact between organic semiconductor PDVT-10 and silver metal as the source electrode was combined to introduce Schottky barrier, so as to limit the source-drain current of organic synaptic devices, and finally reduce device energy consumption. In addition, the operating current of the devices exhibiting biological synaptic behavior was on the order of 10-10 A, such as excitatory postsynaptic current and other basic synaptic behavior. The scheme has provided a simple and efficient strategy for constructing brain-like neuromorphic computing networks.
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Tianjian CHEN, Huipeng CHEN. Low‑energy‑consumption Organic Synaptic Transistors Enabled by Schottky Barrier Regulation[J]. Optoelectronic Technology, 2023, 43(4): 305
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Received: Apr. 3, 2023
Accepted: --
Published Online: Mar. 21, 2024
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