Frontiers of Optoelectronics, Volume. 1, Issue 3, 336(2008)
Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology
The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/InGaAs HBT/PIN photodetector integration scheme. A 1.55 mm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/InGaAs heterojunction bipolar transistor (HBT) process. The InP/InGaAs HBT with a 2 mm×8 mm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 A/W at l51.55 mm, a dark current less than 10 nA at a bias of 25 V and a 23 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 22321 pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 1029 at 2.5 Gbit/s is less than 215.2 dBm.
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Xianjie LI, Yonglin ZHAO, Daomin CAI, Qingming ZENG, Yunzhang PU, Yana GUO, Zhigong WANG, Rong WANG, Ming QI, Xiaojie CHEN, Anhuai XU. Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology[J]. Frontiers of Optoelectronics, 2008, 1(3): 336
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Published Online: Nov. 6, 2012
The Author Email: LI Xianjie (xianjie@tom.com)