Infrared and Laser Engineering, Volume. 36, Issue 2, 214(2007)
Influence of PECVD generated SiO2 and SiNx layers on p-GaN
Keywords
Tools
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese]. Influence of PECVD generated SiO2 and SiNx layers on p-GaN[J]. Infrared and Laser Engineering, 2007, 36(2): 214
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20