Infrared and Laser Engineering, Volume. 48, Issue 12, 1219002(2019)

Research of 0.2 THz doubler multiplier

Xie Wenqing1,*... Hu Nan1, Liu Jianrui2, Zhao Lixin2, Zeng Qingsheng3, Luo Yanbin3, Zhou Ping3, Liu Shuang1 and Yuan Changyong2 |Show fewer author(s)
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    A 0.2 THz high power doubler multiplier was designed and realized based on six anodes in parallel-series GaAs planar Schottky diodes. The Schottky diode was flip-chiped on the 50 μm thick quartz. The efficiency of the circuit was simulated combined of EM simulator and circuit simulator. The measured efficiency was bigger than 5% over the band of 190 GHz to 225 GHz with the input power of 100 mW. The circuit output power and efficiency were measured under the condition of small and large input power as 100 mW and 300 mW. The peak efficiency was 14% at the frequency of 193 GHz and the maximum output power was 14.5 mW with the input power of 100 mW under the self-biased condition. The measured output power was bigger than 10 mW over the band of 188 GHz to 195 GHz with the input power of 300 mW under the self-biased condition. The peak output power was 35 mW at the frequency of 192.8 GHz and the multiplier efficiency was 11%.

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    Xie Wenqing, Hu Nan, Liu Jianrui, Zhao Lixin, Zeng Qingsheng, Luo Yanbin, Zhou Ping, Liu Shuang, Yuan Changyong. Research of 0.2 THz doubler multiplier[J]. Infrared and Laser Engineering, 2019, 48(12): 1219002

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    Paper Information

    Received: Aug. 11, 2019

    Accepted: Sep. 21, 2019

    Published Online: Feb. 11, 2020

    The Author Email: Wenqing Xie (sa06@ainfoinc.com)

    DOI:10.3788/irla201948.1219002

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