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Chinese Journal of Quantum Electronics, Volume. 20, Issue 6, 707(2003)

Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device

[in Chinese]1,*... [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, [in Chinese]1 and [in Chinese]1 |Show fewer author(s)
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    Strain buffer layer and growth interruption were applied in the QW growth by mentalorganic chemical vapor deposition (MOCVD) to improve QW photoluminescence performance. The laser diodes using the QW have very low threshold current densities (43 A/cm2) and high slop efficience (0.34 W/A, per facet).

    Keywords
    growth interruptionlaser diodes MOCVDMOCVDstrain buffer layerstrain quantum well
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 707

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    Received: Dec. 30, 2002

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (panjq@icm.sdu.edu.cn)

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology