A 6-period InGaAsP quantum-wells film has been grown on InP substrate at a low temperature by metal organic chemical vapor deposition (MOCVD). The small signal transmission of the sample at 1.064 μm is 23%. By using it as a saturable absorber and an output coupler concurrently, passive mode-locking operation in a Nd∶YAG laser at 1.064 μm can be realized, and a single pulse train with average pulse duration of 23 ps and energy of 15 mJ was obtained. A Si/SiNx film wich consisted of 4-period quantum-wells structure has been prepared on quartz substrates by RF magnetron reaction sputtering technique and annealed at 1000 ℃ for 30 min in N2 environment. Inserting the sample into the Nd∶YAG laser resonator, passive mode-locking operation at 1.064 μm and a single pulse train with 30 ps average pulse duration can be obtained. Passive mode-locking of using semiconductor multiple quantum-wells film as saturable absorber has advantages of low cost, design and manufacture simplicity, stability and convenience.