MoS2 is a kind of twodimensional semiconductor material with unique band structure. For fewlayer MoS2, the band gap decreases significantly with the number of layers. Accordingly, the magnetic tunnel junctions (MTJs) with MoS2 barrier will show abundant and various physical properties. In this paper, the temperaturebias phase diagrams are calculated, respectively, for MTJs with singlelayer MoS2, doublelayer MoS2, threelayer MoS2 and fivelayer MoS2 barrier under different half the exchange splitting of the ferromagnetic electrodes. The calculations show that, the MTJs with singlelayer and threelayer MoS2 barrier is suitable to be applied at low temperature. In particular, the MTJs with singlelayer MoS2 barrier possess excellent performance at high bias. The optimized region of MTJs with doublelayer MoS2 barrier is located at room temperature and low bias. Therefore, they are favorable for the application of information storage. Through regulating the parameter of the ferromagnetic electrodes, the MTJs with fivelayer MoS2 barrier can work throughout a wide power range. The above results lay a solid theoretical foundation for the application of MTJs with MoS2 barrier.