INFRARED, Volume. 44, Issue 3, 8(2023)
Research on CdSexTe1-x Molecular Beam Epitaxy Technology
The molecular beam epitaxial growth conditions and component adjustment of CdSexTe1-x substrate material for HgCdTe infrared detectors are briefly introduced. Growth conditions include growth structure (mainly CdSexTe1-x/CdTe/ZnTe/Si, CdSexTe1-x/ZnTe/GaAs, etc.), growth temperature (about 300℃), and growth thickness (about 5 m ), etc. Component adjustment includes analyzing the changes of Se components with (JSe+JTe)/JCd and JSe/(JSe+JTe). When the JSe/(JSe+JTe) value is small, it is difficult for the Se component to incorporate into the epitaxial layer. When the JSe/(JSe+JTe) value is large, the Se component increases rapidly. At the same time, when the JSe/(JSe+JTe) value is small, the growth trend of the Se component is relatively easy to control. When the value of JSe/(JSe+JTe) is constant, the Se component increases with the decrease of (JSe+JTe)/JCd. The sudden increase point of Se component change increases with the decrease of (JSe+JTe)/JCd value. This paper can provide some reference for the preparation of high-performance HgCdTe infrared detectors.
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HE Wen, WANG Cong, GAO Da, XING Wei-rong, BAI Wei, YANG Hai-yan, SHE Wei-lin. Research on CdSexTe1-x Molecular Beam Epitaxy Technology[J]. INFRARED, 2023, 44(3): 8
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Received: Oct. 9, 2022
Accepted: --
Published Online: Apr. 7, 2023
The Author Email: Wen HE (sunny__cloud@sina.com)