Laser & Optoelectronics Progress, Volume. 48, Issue 5, 51601(2011)
Photoluminescence of Eu-Doped MgO Irradiated with Xe Ions
Eu-doped MgO single crystals irradiated with 6 MeV Xe ions using 320 kV high voltage experimental platform are investigated by fluorescence spectroscopes. Photoluminescence (PL) intensity of Eu-doped MgO becomes stronger than that of MgO. PL peaks located at 380~550 nm decrease in PL spectra of Eu-doped MgO irradiated with small dose, the intensity of the emission band becomes strong when irradiation dose increases up to 5×1015/cm2. Those photoluminescence phenomena are explained by Fourier transform infrared spectra and Raman spectra.
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Song Yin, Zhang Chonghong, Yang Yitao, Li Bingsheng, Ma Yizhun, Gou Jie, Yao Cunfeng, He Deyan. Photoluminescence of Eu-Doped MgO Irradiated with Xe Ions[J]. Laser & Optoelectronics Progress, 2011, 48(5): 51601
Paper Information
Category: Materials
Received: Aug. 20, 2010
Accepted: --
Published Online: May. 10, 2011
The Author Email: Yin Song (songyin@impcas.ac.cn)
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