Chinese Journal of Quantum Electronics, Volume. 22, Issue 3, 436(2005)

Si掺杂的AlGaInP/GaInP多量子阱光学特性Optical characteristics of AlGaInP/GaInP multiple quantum wells with Si-doping

[in Chinese]*... [in Chinese], [in Chinese], [in Chinese], [in Chinese] and [in Chinese] |Show fewer author(s)
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Si掺杂的AlGaInP/GaInP多量子阱光学特性Optical characteristics of AlGaInP/GaInP multiple quantum wells with Si-doping[J]. Chinese Journal of Quantum Electronics, 2005, 22(3): 436

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    Received: Apr. 22, 2004

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (tch1010@163.com)

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