Journal of Synthetic Crystals, Volume. 49, Issue 9, 1660(2020)

Effect of P Doped ZnO and Defects on Photoelectric Properties

LIU Jin and YANG Ping*
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  • [in Chinese]
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    The defect formation energy of each system after P doped ZnO was predicted using the BP neural network optimized by the Adam algorithm, the analysis shows that the most easily formed systems are the ZnO∶PZn and ZnO∶PZn (2VZn) systems, otherwise the ZnO∶PO and ZnO∶PZn (1VZn) system, and the photoelectric characteristics of each system on the basis of first principles were studied. The analysis shows that the ZnO∶PZn system is n-type conductive, with a band gap of 0.78 eV, which is larger than the intrinsic system. ZnO∶PZn (2VZn) system is p-type conductive, and the band gap is similar to the intrinsic system. The electrical conductivity is similar to the ZnO∶PZn system, which is much higher than the ZnO∶PZn (1VZn) system, and the reflectivity, absorptivity, light transmittance are better than intrinsic ZnO system.

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    LIU Jin, YANG Ping. Effect of P Doped ZnO and Defects on Photoelectric Properties[J]. Journal of Synthetic Crystals, 2020, 49(9): 1660

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    Paper Information

    Category:

    Received: --

    Accepted: --

    Published Online: Nov. 11, 2020

    The Author Email: Ping YANG (yangping1964@163.com)

    DOI:

    CSTR:32186.14.

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