An InGaAs/GaAs strained quantum well structure semiconductor laser diode with an emission wavelength of 880 nm was grown to achieve linear polarized laser outputs with high powers and better beam quality.Based on the PICS 3D software, Laser Diode Arrays (LDA) with a stripe width of 100 μm and filling factor of 50% was fabricated.The output power of 1 cm bars on conductively cooled package with continuous wave (CW) reaches to 60.8 W at a current of 70 A, the threshold current is 11.1 A and the peak wavelength is 878 nm with a Full Width Half Maximum(FWHM)of 2.4 nm.To improve the beam quality and increase the end pumping power of the DLA,a pair of micro step-mirrors were developed to shape the laser beams come from the high power DLA, and then a high power optical fiber couple module was developed.Results show that the couple module with a core diameter of 400 μm and a Number Aperture(NA) of 0.22 can offer the output power of 44.9 W and couple efficiency of 73.8%.