Chinese Journal of Quantum Electronics, Volume. 28, Issue 2, 247(2011)

Characterization of Mo-doped ZnO thin films prepared by sol-gel method

Jing-zhen SHAO1,*... Wei-wei DONG1,2, Ru-hua TAO1,2, Zan-hong DENG1,2, Shu ZHOU1, and Xiao-dong FANG12 |Show fewer author(s)
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    Mo-doped ZnO (MZO) films with different Mo concentration (0~1 at%) were prepared on Al2 O3 (0001) substrates by sol-gel spin coating route. It was found that the MZO films with ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of MZO films can be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreases with the increase of Mo content and then gradually increases with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at%. The carrier concentration and Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (>85%) in near-infrared region (800~2000 nm) indicates the possible use of MZO films in photoelectric device can widen absorption spectrum range.

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    SHAO Jing-zhen, DONG Wei-wei, TAO Ru-hua, DENG Zan-hong, ZHOU Shu, FANG Xiao-dong. Characterization of Mo-doped ZnO thin films prepared by sol-gel method[J]. Chinese Journal of Quantum Electronics, 2011, 28(2): 247

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    Paper Information

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    Received: Nov. 22, 2010

    Accepted: --

    Published Online: Mar. 28, 2011

    The Author Email: Jing-zhen SHAO (jzshao@mail.ustc.edu.cn)

    DOI:

    CSTR:32186.14.

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