Infrared and Laser Engineering, Volume. 45, Issue 5, 505003(2016)
High power 2.1 μm GaInSb/AlGaAsSb quantum well laser diodes with high power conversion efficiency
2.1 μm GaInSb/AlGaAsSb double quantum well lasers were reported. With optimization of epitaxial design and ohmic contact, these uncoated broad-area lasers exhibited a maximum power conversion efficiency of 9.8% which was 1.5 times greater than previous value, a room temperature continuous wave output power of 615 mW and a pulsed wave output power of 1.5 W were achieved. The threshold current density of these lasers was as low as 126 A/cm2, and the slope efficiency was as high as 0.3 W/A. By testing lasers with different cavity lengths, the internal loss and the internal quantum efficiency were measured as 6 cm-1 and 75.5%, respectively, which were all improved compared with previous device. The output power of laser diode operated in CW mode shows no apparent degradation after 3 000 h.
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Song Yuzhi, Song Jiakun, Zhang Zuyin, Li Kangwen, Xu Yun, Song Guofeng, Chen Lianghui. High power 2.1 μm GaInSb/AlGaAsSb quantum well laser diodes with high power conversion efficiency[J]. Infrared and Laser Engineering, 2016, 45(5): 505003
Category: 激光器技术
Received: Sep. 5, 2015
Accepted: Oct. 12, 2015
Published Online: Jun. 12, 2016
The Author Email: Yuzhi Song (songyz@semi.ac.cn)