Optoelectronic Technology, Volume. 43, Issue 3, 212(2023)
Liquid Deposition Method of Hafnium Oxide Thin Films
HfO2 films were successfully prepared by low-cost and easy-to-operate liquid deposition method, and the surface appearance, composition, optical characteristics, and electrical properties of HfO2 thin films generated by liquid deposition method were studied, as well as the reaction mechanism. The results revealed that the chemical composition of HfO2 thin films generated by liquid deposition method was pure and the structure was dense and continuous. The transmittance of HfO2 films after annealing at 500 ℃was greater than 92%; after making a plate capacitor with 40 nm hafnium oxide as the dielectric, the leakage current density at the voltage of 1 V was 3.56×10-7 A/cm2; the capacitance value at the 1 MHz frequency was 1.05 nF, yielding a calculated permittivity of 18.9.The successful preparation of hafnium oxide thin film by liquid deposition could provide a low-cost and simple method for using hafnium oxide thin film as the passivation layer of Micro LED devices.
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Yifeng LIU, Junyang NIE, Kaixin ZHANG, Chang LIN, Min LI, Qun YAN, Jie SUN. Liquid Deposition Method of Hafnium Oxide Thin Films[J]. Optoelectronic Technology, 2023, 43(3): 212
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Received: Nov. 28, 2022
Accepted: --
Published Online: Mar. 21, 2024
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