Acta Optica Sinica, Volume. 6, Issue 11, 1032(1986)
LPE growth of n+InSb PHg1-xCdxTe hetero junction
This paper describes an n+-p InSb/Hg1-xCdxTe heterojunction prepared by using liquid-phase epitaxial method. The growing system used consists of a horizontal slider boat in the open-tube filled with H2. Growth temperature is between 300-400℃ and cooling rate is slower than 8℃/min. The grown film has a mirror-like surface with a thickness of l5-25μm. EDAX-SEM analysis shows that the interface between layer and substrate is straight and the compositional transition is very sharp.
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WU CHANGSHU, LI CHI. LPE growth of n+InSb PHg1-xCdxTe hetero junction[J]. Acta Optica Sinica, 1986, 6(11): 1032