A 25 Gb/s InGaAsP/InGaAsP multi-quantum wells electro-absorption modulator monolithically integrated with distributed feedback laser is fabricated by selective area growth. The photoluminescence wavelength variation is 38 nm between the laser area wavelength λPL of 1535 nm and modulator area wavelength λPL of 1497 nm. The grating is fabricated at the laser region by holographic lithograph technology. The threshold current of thip lasers is 18 mA and the power is over 10 mW at 100 mA with wavelength of 1549 nm. The side-mode suppression ratio is over 40 dB. Extinction ratio is 23 dB by coupling light into the single mode fiber. The 3 dB-bandwidth of 16 GHz has been measured. A 25 Gb/s eye diagram is measured with a 3.5 V non-return to zero (NRZ) pseudorandom modulation signal at -1.9 V bias. A clearly opening eye-diagram with a dynamic extinction ratio of 5.7 dB has been obtained. This laser is appropriate for next generation of optical fiber transmission systems for its high bandwidth and low cost.