Infrared and Laser Engineering, Volume. 32, Issue 3, 259(2003)
Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film
Y1Ba2Cu3O7-xsemiconductive thin film with different buffers is manufactured by current magnetic sputtering with direct and annealing method, and their IR thermal radialization responses are studied. The microstructure of Y1Ba2Cu3O7-x thin film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconductive Y1Ba2Cu3O7-x thin films with buffer layer is better and their signaltonoise ratio is higher. Y1Ba2Cu3O7-x has good speciality for its thermal radiation response in IR band and has good performance in submillimeter band, even in millimeter band. It will become new sensor elements of IR bolometer working at room temperature
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film[J]. Infrared and Laser Engineering, 2003, 32(3): 259