Infrared and Laser Engineering, Volume. 32, Issue 3, 259(2003)

Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film

[in Chinese]1,*... [in Chinese]2, [in Chinese]1 and [in Chinese]3 |Show fewer author(s)
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    Y1Ba2Cu3O7-xsemiconductive thin film with different buffers is manufactured by current magnetic sputtering with direct and annealing method, and their IR thermal radialization responses are studied. The microstructure of Y1Ba2Cu3O7-x thin film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconductive Y1Ba2Cu3O7-x thin films with buffer layer is better and their signaltonoise ratio is higher. Y1Ba2Cu3O7-x has good speciality for its thermal radiation response in IR band and has good performance in submillimeter band, even in millimeter band. It will become new sensor elements of IR bolometer working at room temperature

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film[J]. Infrared and Laser Engineering, 2003, 32(3): 259

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    Paper Information

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    Received: Oct. 8, 2002

    Accepted: Nov. 2, 2002

    Published Online: Apr. 28, 2006

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