Compared with silicon carbide (SiC) and gallium nitride (GaN), gallium oxide (Ga₂O₃) has the advantages of larger band gap width, stronger breakdown field strength, larger absorption cutoff edge, and lower growth cost. Doping technique is an effective method of optimizating physical properties of materials, which can broaden the application of Ga₂O₃ in different fields. In this paper, the progress of rare earth and other elements doped Ga₂O₃ in recent years are reviewed and the luminescence characteristics of rare earth doped Ga₂O₃ are analyzed. Finally, the research direction of rare earth doped Ga₂O₃ and p-type Ga₂O₃ are prospected.