Acta Optica Sinica, Volume. 17, Issue 12, 1709(1997)
Properties Analysis of Ion-Implanted Planar Optical Waveguide in LiTaO3
The ion implanted planar optical waveguide in crystal LiTaO 3 was formed by implantation of He + at an energy of 2.8 MeV and with a dose of 1.4×10 16 ion/cm 2 at 300 K. The modes were observed and measured by prism coupling method. The refractive index profiles of the waveguide were calculated and compared before and after annealing. The damages on the crystal surface caused by the implantation of He + were firstly investigated by using RBS/channeling technique.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Properties Analysis of Ion-Implanted Planar Optical Waveguide in LiTaO3[J]. Acta Optica Sinica, 1997, 17(12): 1709