Chinese Journal of Lasers, Volume. 42, Issue s1, 102006(2015)
GaSb-Based Quantum Wells 2 μm High Power Laser Diode
By reducing the Al concentration in waveguide layer and optical confinement layer,stabilizing the epi-growth condition and combining with standard broad-area-laser processing technology,we obtain a continuous output power of 823 mW when working at 15 ℃,the peak wavelengh is 1.96 μm with 0.5 A injection current.In pulsed condition of 1000 Hz and 5% duty cycle, the maximum output power of about 1.86 W is gotten.
Get Citation
Copy Citation Text
Liao Yongping, Zhang Yu, Xing Junliang, Yang Chengao, Wei Sihang, Hao Hongyue, Xu Yingqiang, Niu Zhichuan. GaSb-Based Quantum Wells 2 μm High Power Laser Diode[J]. Chinese Journal of Lasers, 2015, 42(s1): 102006
Category: Laser physics
Received: Jan. 20, 2015
Accepted: --
Published Online: Sep. 14, 2015
The Author Email: Yongping Liao (liaoyp981@semi.ac.cn)