Infrared Technology, Volume. 42, Issue 10, 953(2020)

Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector

Xiaoxia GONG*, Tingting XIAO, Ruiyu YANG, Bingzhe LI, Falan SHANG, Xiangle SUN, Yupeng ZHAO, Dongqiong CHEN, and Wenyun YANG
Author Affiliations
  • [in Chinese]
  • show less

    Three different passivation films were used to prepare InSb detectors for testing the current–voltage(I-V) characteristic curves of chips with different perimeter–area ratios. The influence of surface leakage current on the performance of an InSb detector was analyzed by comparing the dark-current density at a bias voltage of ?0.1 V. The test results indicated that SiO2+SiNx passivation could significantly reduce the surface dark current. The capacitance–voltage(C-V) test results also demonstrated that the composite passivation film could significantly reduce the interface fixed charge. A composite passivation-film process was applied for the preparation of a 128?128 15-?m InSb focal plane detector. The optimal value factor of the detector chip was R0A ≥5?104·cm2, which was much higher than that before the test (R0A≈5×103·cm2).

    Tools

    Get Citation

    Copy Citation Text

    GONG Xiaoxia, XIAO Tingting, YANG Ruiyu, LI Bingzhe, SHANG Falan, SUN Xiangle, ZHAO Yupeng, CHEN Dongqiong, YANG Wenyun. Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector[J]. Infrared Technology, 2020, 42(10): 953

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jul. 27, 2020

    Accepted: --

    Published Online: Nov. 25, 2020

    The Author Email: Xiaoxia GONG (641592956@qq.com)

    DOI:

    Topics