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Acta Photonica Sinica, Volume. 33, Issue 12, 1461(2004)

Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃[J]. Acta Photonica Sinica, 2004, 33(12): 1461

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    Received: Jan. 7, 2004

    Accepted: --

    Published Online: Sep. 17, 2007

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology