Acta Optica Sinica, Volume. 30, Issue 2, 518(2010)

Development of the Parallel-Gate Structure of ZnO Field Emission Display

Lin Zhixian*, Guo Tailiang, and Zhang Ting
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  • [in Chinese]
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    With aging treated zinc powder as raw materials,the tetrapod-like ZnO material was prepared by high-temperature vapour phase oxidation method. The ZnO field emission cathode arrays were prepared by the application of thick-film,lithography and screen printing technologies. The cathode plate and anode plate were made of a 5 inch (12.7 cm) monochrome parallel-gate structure field emission display (FED) panel and its field emission performance was tested. The parameters such as the gate voltage,anode voltage as well as cathode thickness which affect the emission performance were analyzed and discussed. The FED can achieve full-screen light emission by driving at about 4000 V anode voltage and 300 V gate voltage. The experimental results show that the structure of ZnO parallel-gate structure FED has a good regulation,a good field emission performance and good application prospects.

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    Lin Zhixian, Guo Tailiang, Zhang Ting. Development of the Parallel-Gate Structure of ZnO Field Emission Display[J]. Acta Optica Sinica, 2010, 30(2): 518

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    Paper Information

    Category: Optical Design and Fabrication

    Received: Mar. 17, 2009

    Accepted: --

    Published Online: Feb. 2, 2010

    The Author Email: Zhixian Lin (lzx2005000@163.com)

    DOI:10.3788/aos20103002.0518

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