Microelectronics, Volume. 53, Issue 5, 884(2023)

A Fast Transient Response LDO Circuit Based on Swing Rate Enhancement

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less

    A fast transient response output capacitor-less LDO circuit with slew rate enhancement was designed. The error amplifier adopted a current mirror transconductance structure, which reduced the difficulty coefficient of frequency compensation. In addition, a transient enhanced circuit that can provide additional charge and discharge current for the power transistor was designed, which demonstrated a quick response to the change of load, increased the slew rate, and effectively improved the load transient response. The simulation results show that the proposed circuit can achieve a phase margin larger than 60° among the full load range with only Miller compensation. Moreover, if the load jumps between 100 μA and 100 mA within 0.5 μs, the undershoot and overshoot voltage are 69 mV and 64mV respectively, and the settling time is 0.89 μs and 0.86 μs respectively. The undershoot and overshoot voltage are attenuated by 73% and 78% respectively compared with the one without a transient enhanced circuit, and the load transient response is significantly improved.

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A Fast Transient Response LDO Circuit Based on Swing Rate Enhancement[J]. Microelectronics, 2023, 53(5): 884

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Feb. 28, 2023

    Accepted: --

    Published Online: Jan. 3, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.230092

    Topics