Chinese Optics Letters, Volume. 5, Issue 11, 671(2007)
Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids
The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxide-semiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.
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Gong-Ru Lin. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids[J]. Chinese Optics Letters, 2007, 5(11): 671
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