Chinese Journal of Quantum Electronics, Volume. 34, Issue 5, 635(2017)

Preparation and optical band gap of Al-doped Mg2Si thin films

Shanlan WANG1,*... Yangfang LIAO1,2, Di FANG1, Hongxian WU1, Qingquan XIAO1, Yunliang YANG1 and Quan XIE1 |Show fewer author(s)
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    The Al-doped Mg2Si thin films on Si substrates are fabricated by magnetron sputtering method. Influences of doping levels on the compositions, surface topographies, roughness and optical band gap values of Mg2Si thin films are investigated with X-ray diffraction (XRD), scanning electron microscope(SEM), atomic force microscope(AFM) and spectrophotometer. XRD results show that the diffraction peaks of Mg2Si become stronger firstly, and then become weaker with increasing of Al doping amount. SEM and AFM results show that the crystallinity increases first and then decreases. Grain size decreases, and the roughness increases first and then decreases with increasing of Al doping level. The indirect transition band gap of the doped films ranges from 0.423 eV to 0.495 eV. The direct transition band gap ranges from 0.72 eV to 0.748 eV. The indirect and direct transition band gap are 0.53 eV and 0.833 eV before doping, respectively.

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    WANG Shanlan, LIAO Yangfang, FANG Di, WU Hongxian, XIAO Qingquan, YANG Yunliang, XIE Quan. Preparation and optical band gap of Al-doped Mg2Si thin films[J]. Chinese Journal of Quantum Electronics, 2017, 34(5): 635

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    Paper Information

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    Received: Jun. 29, 2016

    Accepted: --

    Published Online: Oct. 30, 2017

    The Author Email: Shanlan WANG (124060649@qq.com)

    DOI:10.3969/j.issn.1007-5461. 2017.05.019

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