Infrared detectors play an important role in the areas of military investigation, remote sensing, communication, precision guidance and aerospace, which have been concerned by the world for a long time and have high research value and good application prospect. The integration of micro-nano structures and traditional semiconductor detector can effectively improve the photon coupling efficiency and equivalent optical path, exceed the absorption limit of traditional bulk materials, improve the quantum efficiency of photoelectric devices and reduce the dark current of devices, providing a new technical means for the research of high-performance infrared detectors. Various types of enhanced infrared photodetectors with micro-nano structures were reviewed in this paper. Firstly, the basic principle of performance enhancd infrared detectors with micro-nano structures were introduced. According to the different materials and functions of micro-nano structures, it was classified and compared; Secondly, the research progress of the above micro-nano structures in infrared detectors were systematically demonstrated from the aspects of dielectric type, surface metal type and 3D plasma cavity type. Finally, the development trend of infrared detector based on micro-nano structure enhancement was prospected.