In this paper, the GaAs/AlGaAs non-uniform quantum well infrared detector material was successfully grown by molecular beam epitaxy (MBE), and the microstructure was characterized in detail. The performance difference between the non-uniform quantum well structure and the conventional quantum well infrared detector is analyzed and compared, and the performance change of the non-uniform quantum well infrared detector under different well widths is comparatively studied. The microstructure of non-uniform quantum well infrared detector materials was analyzed by high resolution transmission electron microscopy (HRTEM) combined with energy dispersive spectroscopy (EDS), and the non-uniform well doping was characterized by secondary ion mass spectrometry (SIMS). The results show that the crystal quality of the non-uniform quantum well epitaxial material is very good, and the non-uniform quantum well structure and doping concentration are also in good agreement with the design values. The unit quantum well infrared detector has been successfully fabricated. The research results show that for non-uniform quantum well infrared detectors, the electric field distribution of the quantum well can be changed by changing the doping concentration and barrier width of each well. Compared with traditional uniform quantum well infrared detectors, their dark current significantly decreases (by about an order of magnitude). Moreover, under different well widths, the transition modes of non-uniform quantum wells can change, and the devices with bound state to quasi-bound state transition modes (B-QB) have better blackbody response and lower dark current.