Electro-Optic Technology Application, Volume. 35, Issue 6, 15(2020)

Research Progress of Doping Metal Oxide Semiconductor Gas Sensor

CAO Guan-long1,*... LI Tie2, PAN Guo-feng3, YANG Xue-li3, WANT Ru3, CUI Jun-rui3 and HUI Guang-ze3 |Show fewer author(s)
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • show less

    Metal oxide semiconductor gas sensor has attracted widely because of its high sensitivity, low manufacturing cost and simple measurement, which has great utilization potentiality in the aspect of the detection of toxic and harmful gases. Doping, as one of the most commonly used for modification method in the preparation process, has been paid lots of attention and researched wildly by domestic and international scholars. Therefore, the research progress of metal oxide semiconductor gas sensing materials is reviewed from the perspectives of doping, such as pure metal oxide, pure metal doping, rare earth element doping, composite metal oxide, metal oxide doping and so on. Furthermore, the problems and the developing tendency are summarized.

    Tools

    Get Citation

    Copy Citation Text

    CAO Guan-long, LI Tie, PAN Guo-feng, YANG Xue-li, WANT Ru, CUI Jun-rui, HUI Guang-ze. Research Progress of Doping Metal Oxide Semiconductor Gas Sensor[J]. Electro-Optic Technology Application, 2020, 35(6): 15

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Apr. 7, 2020

    Accepted: --

    Published Online: Feb. 5, 2021

    The Author Email: Guan-long CAO (caoguanlong@hebut.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics