Laser & Optoelectronics Progress, Volume. 59, Issue 19, 1931001(2022)
Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation
LaTiO3 (H4) films were prepared using ion-beam-assisted electron beam evaporation. The effect of substrate temperature, ion-beam density, high-temperature annealing, and plasma post-treatment on the optical properties and surface topography of the H4 films were tested. Results show that increasing the substrate temperature and ion-beam density appropriately can improve the refractive index and film quality. Under 175 °C substrate temperature and 120 μA/cm2 ion-beam density, the refractive index of the H4 films can reach 2.70. Moreover, annealing and plasma post-treatment can further improve the film quality. The optimized process parameters were used to prepare high reflection (HR) films with H4 for a 980-nm laser diode. The HR films with H4 exhibit the best laser damage resistance under 600 MW/cm2 laser power density when compared with the HR films made with Ta2O5 or TiO2 as high-index materials.
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Xiaoxue Li, Lingcheng Huang, Yongqin Hao. Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931001
Category: Thin Films
Received: Aug. 2, 2021
Accepted: Sep. 24, 2021
Published Online: Oct. 11, 2022
The Author Email: Hao Yongqin (hyq72081220@aliyun.com)