Chinese Physics B, Volume. 29, Issue 10, (2020)
Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric
Stress voltages on time-dependent breakdown characteristics of GaN MIS-HEMTs during negative gate bias stress (with VGS < 0, VD = VS = 0) and off-state stress (VG < VTh, VDS > 0, VS = 0) are investigated. For negative bias stress, the breakdown time distribution (β) decreases with the increasing negative gate voltage, while β is larger for higher drain voltage at off-state stress. Two humps in the time-dependent gate leakage occurred under both breakdown conditions, which can be ascribed to the dielectric breakdown triggered earlier and followed by the GaN layer breakdown. Combining the electric distribution from simulation and long-term monitoring of electric parameter, the peak electric fields under the gate edges at source and drain sides are confirmed as the main formation locations for per-location paths during negative gate voltage stress and off-state stress, respectively.
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Tao-Tao Que, Ya-Wen Zhao, Qiu-Ling Qiu, Liu-An Li, Liang He, Jin-Wei Zhang, Chen-Liang Feng, Zhen-Xing Liu, Qian-Shu Wu, Jia Chen, Cheng-Lang Li, Qi Zhang, Yun-Liang Rao, Zhi-Yuan He, Yang Liu. Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric[J]. Chinese Physics B, 2020, 29(10):
Received: Jul. 3, 2020
Accepted: --
Published Online: Apr. 21, 2021
The Author Email: Liu Yang (liuy69@mail.sysu.edu.cn)