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Optoelectronics Letters, Volume. 10, Issue 4, 250(2014)

Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

Gui-chu CHEN1,2、* and Guang-han FAN2
Author Affiliations
  • 1Department of Electronic Information, Zhao Qing University, Zhaoqing 526061, China
  • 2Institute of Optoelectronic Material and Technology, South China Normal University,Guangzhou 510631, China
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    The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. Thesimulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, whichis mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reportedexperimental results perfectly.

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    CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. Optoelectronics Letters, 2014, 10(4): 250

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    Paper Information

    Received: Mar. 10, 2014

    Accepted: --

    Published Online: Jul. 13, 2020

    The Author Email: Gui-chu CHEN (gchenbox@126.com)

    DOI:10.1007/s11801-014-4033-7

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology