Acta Physica Sinica, Volume. 68, Issue 8, 087302-1(2019)
Recently, flexible electronic devices have attracted extensive attention due to their characteristics of flexibility, miniaturization and portability. Flexible functional oxide thin films with high performance and stability are the basis for high-performance flexible electronic devices. Perovskite lead zirconate titanate Pb(Zr0.53Ti0.47)O3 (PZT) at "morphotropic phase boundary" indicates excellent ferroelectricity and piezoelectricity, and has broad prospects in flexible non-volatile memories, sensors and actuators. Moreover, high-temperature stable flexible memories and sensors have received increasing attention due to the escalating complexity of the external environment. In the present work, Pb(Zr0.53Ti0.47)O3/SrRuO3/BaTiO3 (PZT/SRO/BTO) heterostructures are prepared by pulsed laser deposition on high temperature resistant two-dimensional layered fluorphlogopite mica substrates. Afterward, flexible epitaxial PZT thin films are obtained by mechanical stripping. The ferroelectricity, piezoelectricity and high temperature characteristics of PZT thin films are investigated. The thin films show superior ferroelectricity at room and high temperatures. At room temperature, the thin films exhibit excellent ferroelectricity with a remnant polarization (Pr) of ~
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Min Li, Xin-Na Shi, Ze-Lin Zhang, Yan-Da Ji, Ji-Yu Fan, Hao Yang.
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Received: Nov. 5, 2018
Accepted: --
Published Online: Oct. 29, 2019
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