In recent years, with the rapid development of micro-electro-mechanical systems (MEMS), more urgent requirements have been put forward for the flexibility and electrical activity strength of ferroelectric materials. PVDF has attracted much attention as an excellent flexible ferroelectric material. In order to improve the ferroelectric properties of flexible PVDF films, three methods were used simultaneously in this paper. The three methods are (1)introducing TrFE into molecular chains, (2)doping low concentration BaTiO3 in solution system, (3)using thermal stretching method for thin films. The experimental results show that all three methods can effectively improve the ferroelectric properties of PVDF. The remnant polarization intensity of the films reached 19.8 μC/cm2. The low concentration of BaTiO3 doping will make the whole system unable to form a dense structure. High doping concentration will lead to the formation of clusters, resulting in the increase of defects in the film. Appropriate doping concentration can effectively improve the ferroelectric properties of thin films. In addition, the use of appropriate stretch temperature increases the molecular polarity and increases the ferroelectric phase content, the overall flexibility of the film greatly improves its application value.