Chinese Journal of Lasers, Volume. 10, Issue 5, 277(1983)
Investigation on semiconductor Si doping by laser irradiation
A method is described for semiconductor Si doping of organic colloidal dopants. Both P-type and N-type crystalline Si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
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Du Yuancheng, Sun Diechi, Zhao Yancheng, Li Fuming. Investigation on semiconductor Si doping by laser irradiation[J]. Chinese Journal of Lasers, 1983, 10(5): 277
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