Acta Photonica Sinica, Volume. 44, Issue 8, 831002(2015)
Study on the Growth of Hgcdte Graded-Gap Films and the Infrared Transmission Spectra
Hg1-xCdxTe graded-gap films were grown by the method of vaper phase epitaxy,and the transverse composition non-uniformity of the films was researched by infrared transmission spectra.Applying the multilayer model and transfer matrix,the infrared transmission spectra and compositional profiles of the HgCdTe epilayers were calculated,the calculated values were consistent with the experimental results.The theoretical calculated compositional profile of the vaper phase epitaxy layers was corresponding to variation tendency of the experimental data measured by energy spectrum.Based on traditional photovoltaic technique,the 10×1 linear focal plane arrays detectors were prepared by using Au-doped Hg1-xCdxTe film materials.Performances of the detectors are favorable,and the detectivity of the detector can be achieved 4.20×1011/ (cm·Hz1/2·W-1)@95 K.
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JIAO Cui-ling, WANG Reng, ZHANG Li-ping, LIN Xin-chao, SHAO Xiu-hua, DU Yun-chen, LU Ye. Study on the Growth of Hgcdte Graded-Gap Films and the Infrared Transmission Spectra[J]. Acta Photonica Sinica, 2015, 44(8): 831002
Received: Dec. 10, 2014
Accepted: --
Published Online: Sep. 8, 2015
The Author Email: Cui-ling JIAO (jclx_1112@163.com)