Acta Photonica Sinica, Volume. 44, Issue 3, 319004(2015)
Reflection Band Gap in Thue-Morse Quasicrystal Containing Anisotropic Left Handed Material
By means of transfer matrix method, the reflection band gap of Thue-Morse(T-M) structure containing anisotropic left handed material was studied.The influence of incident angle, polarization and lattice scaling factor on reflection band gap was theoretically investigated.It is shown that there is an Omnidirectional Reflection Band (ORB) in the structure.The width of the ORB is determined by the higher frequency band edge for TE polarization and the lower frequency band edge for TM polarization.When an impurity is introduced, a defect mode appears in the reflection band gap.The position of the defect modes is weakly dependent on incident angle for TE polarization, but affected by incident angle for TM polarization.
Get Citation
Copy Citation Text
KANG Yong-qiang, GAO Peng, LIU Hong-mei, ZHANG Chun-min. Reflection Band Gap in Thue-Morse Quasicrystal Containing Anisotropic Left Handed Material[J]. Acta Photonica Sinica, 2015, 44(3): 319004
Category:
Received: Aug. 19, 2014
Accepted: --
Published Online: Apr. 14, 2015
The Author Email: Yong-qiang KANG (kyq_2000@sohu.com)