Acta Photonica Sinica, Volume. 44, Issue 3, 319004(2015)

Reflection Band Gap in Thue-Morse Quasicrystal Containing Anisotropic Left Handed Material

KANG Yong-qiang1,2、*, GAO Peng3, LIU Hong-mei1, and ZHANG Chun-min2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • show less

    By means of transfer matrix method, the reflection band gap of Thue-Morse(T-M) structure containing anisotropic left handed material was studied.The influence of incident angle, polarization and lattice scaling factor on reflection band gap was theoretically investigated.It is shown that there is an Omnidirectional Reflection Band (ORB) in the structure.The width of the ORB is determined by the higher frequency band edge for TE polarization and the lower frequency band edge for TM polarization.When an impurity is introduced, a defect mode appears in the reflection band gap.The position of the defect modes is weakly dependent on incident angle for TE polarization, but affected by incident angle for TM polarization.

    Tools

    Get Citation

    Copy Citation Text

    KANG Yong-qiang, GAO Peng, LIU Hong-mei, ZHANG Chun-min. Reflection Band Gap in Thue-Morse Quasicrystal Containing Anisotropic Left Handed Material[J]. Acta Photonica Sinica, 2015, 44(3): 319004

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Aug. 19, 2014

    Accepted: --

    Published Online: Apr. 14, 2015

    The Author Email: Yong-qiang KANG (kyq_2000@sohu.com)

    DOI:10.3788/gzxb20154403.0319004

    Topics