Chinese Optics Letters, Volume. 2, Issue 1, 0150(2004)
Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_(x)Ga_(1-x)N/GaN quantum well
The third-order susceptibility of In_(x)Ga_(1-x)N/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass Schrodinger equation is solved numerically. It is shown thatthe third-order susceptibility for third harmonic generation (THG) of In_(x)Ga_(1-x)N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics of \chi^(3)_(THG)(-3\omega, \omega, \omega, \omega) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.
Keywords
Tools
Get Citation
Copy Citation Text
Yaochen Bai, Jingliang Liu, Duanzheng Yao. Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in In_(x)Ga_(1-x)N/GaN quantum well[J]. Chinese Optics Letters, 2004, 2(1): 0150
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20