Chinese Journal of Quantum Electronics, Volume. 22, Issue 1, 85(2005)

Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well

[in Chinese]*... [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese] and [in Chinese] |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less

    Using the Shu Lien Chuang method , the change of heavy and light hole energy caused by the strain calculated in the AlInGaAs/AlGaAs strain was quantum well. According to the Harrison model, the energy level distribution of the hole and electron in the strain AlIn-GaAs/AlGaAs quantum well and GaAs/AlGaAs unstrain quantum well were detailedly calculated and discussed. Further, through calculating and comparing the different quantum wells linear gain, we obtained that the AlInGaAs/AlGaAs stain quantum well has the better optical gain characteristic than the GaAs/AlGaAs unstrain quantum well. So the AlInGaAs/AlGaAs stain quantum well semiconductor material was used to fabricate semiconductor laser with the advantage over the traditional GaAs/AlGaAs material.

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 85

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 27, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (gate@emails.bjpu.edu.cn)

    DOI:

    Topics