Chinese Journal of Quantum Electronics, Volume. 22, Issue 1, 85(2005)
Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well
Using the Shu Lien Chuang method , the change of heavy and light hole energy caused by the strain calculated in the AlInGaAs/AlGaAs strain was quantum well. According to the Harrison model, the energy level distribution of the hole and electron in the strain AlIn-GaAs/AlGaAs quantum well and GaAs/AlGaAs unstrain quantum well were detailedly calculated and discussed. Further, through calculating and comparing the different quantum wells linear gain, we obtained that the AlInGaAs/AlGaAs stain quantum well has the better optical gain characteristic than the GaAs/AlGaAs unstrain quantum well. So the AlInGaAs/AlGaAs stain quantum well semiconductor material was used to fabricate semiconductor laser with the advantage over the traditional GaAs/AlGaAs material.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 85