Acta Optica Sinica, Volume. 15, Issue 1, 25(1995)
Specifying the Variation of Reflectivity with Wavelength of a Semictinductor Diode Facet After AR Coated
Comparison between spectra from the facet of a semiconductor laser before andafter AR coated under the same bias condition has led to the establishment of the variationcurve of the facet reflectivity vs. the wavelength.,This method is applicable to a certainwavelength range, and overcomes the difficulty encountered when Kaminow's methodis implemented to determine the very low reflectivity of the diode with both facetS ARcoated.As a result, a reflectivity of less than 8×10-5 at the second coated facet has been measured.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Specifying the Variation of Reflectivity with Wavelength of a Semictinductor Diode Facet After AR Coated[J]. Acta Optica Sinica, 1995, 15(1): 25