Acta Optica Sinica, Volume. 15, Issue 10, 1288(1995)
LPE Growth of SCH LD with Ultra-Thin Active Layer
The realization of SCH multilayer structure with ultra-thin GaAs active layer using a modified graphite boat system and low temperature technology is demonstrated.Our method utilizes thin solutions and saturation wafers to achive GaAs epituxial layer in the thickness of 25~35 nm which is uniform over relatively large area. Broad-contact LDs using the above mentioned epitaxial wafers are fabricated. These devices have threshold current density of 700~800 A/cm2 at room temperature.
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[in Chinese], [in Chinese], [in Chinese]. LPE Growth of SCH LD with Ultra-Thin Active Layer[J]. Acta Optica Sinica, 1995, 15(10): 1288