Chinese Optics Letters, Volume. 9, Issue 6, 063202(2011)

Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches

Hong Liu1, Jingli Wang1, Lin Zhang1, Binjie Xin1, Xinmei Wang1,2, and Wei Shi
Author Affiliations
  • 1Applied Physics Department, Xi'an University of Technology, Xi'an 710048, China
  • 2State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
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    Photoconductive semiconductor switches (PCSSs) are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.

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    Hong Liu, Jingli Wang, Lin Zhang, Binjie Xin, Xinmei Wang, Wei Shi. Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches[J]. Chinese Optics Letters, 2011, 9(6): 063202

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    Paper Information

    Category: Ultrafast Optics

    Received: Sep. 13, 2010

    Accepted: Feb. 21, 2011

    Published Online: Apr. 28, 2011

    The Author Email:

    DOI:10.3788/COL201109.063202

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